| PART |
Description |
Maker |
| CPH583507 CPH5835 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| MCH5818 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| ECH06A20 |
Schottky Barrier Diode
SBD
|
NIEC[Nihon Inter Electronics Corporation]
ETC[ETC]
|
| NSH03A10 |
Schottky Barrier Diode
SBD
|
NIEC[Nihon Inter Electronics Corporation]
|
| GCH30A10 GCH20A09 GCH20A10 |
SBD
Schottky Barrier Diode
|
NIEC[Nihon Inter Electronics Corporation]
|
| MA2C700A MA2C700 |
Schottky Barrier Diodes (SBD) SILICON, L BAND, MIXER DIODE, DO-34
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| EMH2801 |
SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| UPA508TE-T2 |
Nch enhancement-type MOS FET (On-chip schottky barrier diode(SBD))
|
NEC
|
| MA3S781E MA3S781D |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
|
| MA3X789 MA789 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
PANASONIC[Panasonic Semiconductor]
|
| FW507 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
